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| IGBT Lightspeed Series IXGA 15N100C IXGP 15N100C VCES IC25 VCE(sat) tfi(typ) =1000 V = 30 A = 3.5 V = 115 ns Symbol www..com V CES Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load TC = 25C Maximum Ratings 1000 1000 20 30 30 15 60 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 W C C C C Features V V V V A A A A G E C (TAB) G CE VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TO-220AB (IXGP) TO-263 AA (IXGA) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g * International standard packages JEDEC TO-220AB and TO-263AA * Low switching losses * MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVCES VGE(th) ICES IC = 250 A, VGE = 0 V IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = 20 V IC = ICE90, VGE = 15 Min. 1000 2.5 TJ = 25C TJ = 125C Characteristic Values Typ. Max. V 5.0 100 3.0 100 3.5 V A mA nA V V * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode power supplies Advantages * Easy to mount with one screw * Reduces assembly time and cost * High power density TJ = 125C (c) 2003 IXYS All rights reserved 2.6 DS98647B(01/03) IXGA 15N100C IXGP 15N100C Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies Coes Cres Qg Qge www..com Characteristic Values Min. Typ. Max. 12 16 1720 S pF pF pF nC nC nC ns ns 200 160 1.40 ns ns mJ ns ns mJ ns ns mJ 0.83 K/W K/W TO-220 AB Dimensions IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz 95 35 73 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 960 V, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 960 V, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG TO-220 13 26 25 15 150 101 0.85 25 18 0.60 220 210 1.85 Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector Bottom Side 0.5 TO-263 AA Outline 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. Min. Recommended Footprint (Dimensions in inches and mm) Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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